| 摘要 |
PURPOSE: To provide a semiconductor device which has contact holes with a low resistance formed in self-aligning and suppresses the degradation of transistor characteristics. CONSTITUTION: The semiconductor device having at least a pair of impurity regions in a semiconductor substrate 101 consists of a silicon 108 formed on the impurity region 107, a gate oxide film 102 formed between impurity regions 107 in the semiconductor substrate 101, a gate electrode formed on the gate insulating film 102, a first silicon nitride film 105 formed on the gate electrode, a second silicon oxide 106 formed on the side plane of the gate electrode, a second silicon nitride 109 formed on the part of upper surface of the silicon 108 as well as on the side plane of a silicon oxide 106, and tungsten 114 formed on the silicon 108. |
