CAPACITOR HAVING DOUBLE BARRIER LAYER OF HETEROGENEOUS NITRIDE AND METHOD FOR FORMING ELECTRODE OF THE SAME

摘要

PURPOSE: A capacitor having a double barrier layer of heterogeneous nitride and a method for forming an electrode of the same are provided to form the capacitor with a dielectric material having a high dielectric constant by using the double barrier layer. CONSTITUTION: A polysilicon layer(21) is formed on an upper face of a substrate. An ASix layer(1<x<3)(22) is formed on an upper face of the polysilicon layer(21). An A1-ySiyN layer(0 <=y<1)(23) as the first barrier is formed on an upper face of the ASix layer(1<x<3)(22) where A is Ti or Ta. A DzA1-zN layer(0<z<1)(24) as the second barrier layer is formed on an upper face of the A1-ySiyN layer(0 <=y<1)(23) where A is Ti, W or Ta and D is Cr, Re or Al. A lower electrode(25) is formed on an upper face of the DzA1-zN layer(0<z<1)(24). A dielectric layer(26) is formed on an upper face of the lower electrode(25). An upper electrode(27) is formed on an upper face of the dielectric layer(26).