| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: To manufacture a semiconductor device with a high yield. CONSTITUTION: The surface 10S of a substrate is thermally oxidized to form an oxide film. The oxide film is so patterned as to expose the surface 10S in an active region, to form an oxide film 20. The exposed part of the surface 10S is thermally oxidized to form a thermal oxide film. Then, at least a portion of the thermal oxide film in an element formation region is removed. A silicon film 41 is formed by epitaxial growth on the exposed part of the surface 10S. Next, the silicon film 41 is polished by a CMP method so that the height of the top surface of the polished silicon film is lower than the top surface of the oxide film 20. Thereafter, the surface of the silicon film is thermally oxidized to form a thermal oxide film. After various ion implantation processes, the thermal oxide film is removed. |
| 申请公布号 |
KR20030025819(A) |
申请公布日期 |
2003.03.29 |
| 申请号 |
KR20020056117 |
申请日期 |
2002.09.16 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HORITA KATSUYUKI;KUROI TAKASHI;SHIOZAWA KATSUOMI |
| 分类号 |
H01L21/28;H01L21/20;H01L21/76;H01L21/762;H01L21/822;H01L21/8234;H01L21/8238;H01L23/544;H01L27/04;H01L27/08;H01L27/092;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/28 |
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