发明名称 THIN FILM TRANSISTOR SUBSTRATE FOR REFLECTIVE LCD AND FABRICATING METHOD THEREOF
摘要 PURPOSE: A thin film transistor substrate for a reflective liquid crystal display device and a method for fabricating the same are provided to simplify the fabricating procedure by forming an embossing pattern on a photosensitive film for black matrix by using a black positive photosensitive film. CONSTITUTION: A method for fabricating a thin film transistor substrate for a reflective liquid crystal display device includes the steps of forming gate and data wires on an insulating substrate via a gate insulating film covering the gate wires or a semiconductor pattern formed on the gate insulating film on gate electrodes, forming a black matrix insulating film on the data wires and the semiconductor pattern by using a black photosensitive film, and forming a reflecting film connected to drain electrodes by using a conductive material with flexibility on the black matrix insulating film. The insulating film for the black matrix(80) is formed by the sub-steps of doping the photosensitive film, embossing the photosensitive film at positions corresponding to pixel areas by exposing and developing the photosensitive film by using mask, and forming first to third contact holes(101-103) for exposing the drain electrodes(62) and gate and data pads(24,64). The insulating film for the black matrix is flat at positions corresponding to the gate and data pads.
申请公布号 KR20030025516(A) 申请公布日期 2003.03.29
申请号 KR20010058597 申请日期 2001.09.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, MUN PYO;KIM, BO SEONG;KIM, SANG GAP;NOH, SU GWI
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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