THIN FILM MAGNETIC MATERIAL MEMORY

摘要

PURPOSE: To reduce the array area of an MRAM (magnetic random access memory) device in which tunnel magneto resistance elements are arranged. CONSTITUTION: In this memory, tunnel magneto resistance elements TMRs constituting an MTJ (magnetic tunneling junction) memory cell are connected among sub-bit lines SBLs and straps SLs. The strap SLs are shared by a plurality of tunnel magneto resistance elements TMRs which are adjacent in row directions in the same sub-array SA. Access transistors ATRs are connected among the straps SLs and the ground voltage GND and are turned ON/OFF in response to corresponding word lines WLs. Since the memory can carry out the reading of data without providing access transistors ATRs corresponding to respective tunnel magneto resistance elements TMRs, the array area can be miniaturized.