DRY ETCH APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE AND COVER RING OF THE SAME

摘要

PURPOSE: A dry etch apparatus for fabricating a semiconductor device and a cover ring of the same are provided to lengthen an exchanging period of the cover ring by preventing an etching phenomenon of the cover ring in a plasma state. CONSTITUTION: A cooling plate(14) is formed at a lower portion of an upper structure(10). The cooling plate(14) is used for controlling the temperature of an upper electrode(12). A shield ring(16) is installed at a side portion of the upper electrode(12). An outer ring(18) is installed at a side portion of the shield ring(16). A center ring(20) is installed at a side portion of the outer ring(18). An electrical spin chuck is installed on an upper surface of a lower electrode(22). A wafer(28) is loaded on the electrical spin chuck. A holder ring(24) is installed at a side portion of the lower electrode(22). A base ring(26) is installed at a side portion of the holder ring(24). A focus ring(30) is installed at an edge of the lower electrode(22). A cover ring(32) is installed at a side portion of the focus ring(30). A bellows ring(34) is installed at a lower portion of the lower electrode(22).