| 摘要 |
PROBLEM TO BE SOLVED: To materialize a dynamic semiconductor memory device which is suitable for mixed loading with a logic, by forming itself in a CMOS process. SOLUTION: A conductive wire (3) forming the word line (WL) of a memory cell (MC), and a conductive wire (5) forming a memory cell cell plate electrode (CP), are made on the same wiring layer. The difference of the level in a capacitor is removed by constituting a memory cell capacitor into planar capacitor structure. |
