| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a tantalum oxide capacitor which can enhance the property of step coverage of a tantalum oxide thin film, and can enhance the electric property of a capacitor by depositing a tantalum oxide and applying an atomic layer thin film deposition method. SOLUTION: The formation method for a tantalum oxide capacitor includes a step of forming a nitride film 102 by nitriding the upper part of a lower electrode 100, a step of depositing a tantalum nitride thin film (Ta-N) 104 on the above nitride film 102 and applying an atomic layer thin film deposition method (ALD), a step of forming a tantalum oxide thin film 106 by oxidizing the above tantalum nitride thin film 104, and a step of forming an upper electrode 108 on the above tantalum oxide thin film. |
