发明名称 INTEGRATED SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To make projected electrodes and transparent electrodes electrically conductive stably and reliably with an active region subjected to a local stress, by preventing short-circuiting between the projected electrodes. SOLUTION: Projections 43 are formed on a glass substrate 13 as a transparent substrate abutted between adjacent projected electrodes 4. The length L of the projections 43 is made longer than the projected electrodes 4 as bumps. Since such projections 43 are formed, chains of conductive particles 5 are cut off by the projections 43 to thereby prevent short-circuiting between the projected electrodes 4.</p>
申请公布号 JP2003092309(A) 申请公布日期 2003.03.28
申请号 JP20010284251 申请日期 2001.09.19
申请人 FUJI ELECTRIC CO LTD 发明人 OSHIKAWA KAZUSHI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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