| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of preventing deterioration of well pressure resistance due to the injection of impurity to a well boundary region, and reducing leak currents even when electric field concentration is generated in an element forming region at the upper part of the side wall of an element separating groove. SOLUTION: This method for manufacturing this semiconductor element comprises a process for forming a trench 5 for separating an element on a silicon substrate 1, a process for forming an oxide film 7a by using a high density plasma DVD method in order to bury the trench 5 to the middle, and a process for injecting boron to an element forming region positioned at the upper part of the side wall of the trench 5.
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