| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a thin film high resistance element having precise resistance, which has heat resistance and oxidation resistance, and which can easily be manufactured at a comparatively inexpensive manufacture cost, and to provide a manufacturing method. SOLUTION: The device has a thin film resistance element 10 having a resistance film 3 constituted of a silicon cermet material. The silicon cermet material is constituted of silicon, and composition including one type of element selected from oxygen, nitrogen and carbon for a metal element. The metal element constitutes the semiconductor device selected by one or above types from Ru, Ir and Pt. The semiconductor device is manufactured in a process for forming the resistance film 3 by a sputtering method, and a process for patterning the resistance film 3 and forming the thin film resistance element 10 constituted of the resistance film 3.
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