| 摘要 |
PROBLEM TO BE SOLVED: To readily form a number of high-performance thin film transistors on a large glass substrate. SOLUTION: An insulation film 2 is formed on a substrate 1, and a hole 21 shaped like a quadrangular pyramid is formed on a predetermined position inside the surface of the insulation film 2. Subsequently, an amorphous silicon film 4 is formed on the insulation film 2, and a laser beam is emitted to the amorphous silicon film 4. Thus, while amorphous silicon at the bottom part of the hole 21 is maintained at a non-melting state, the other parts of the amorphous film are melted, crystal growth is caused to occur in which the amorphous silicon maintained at the non-melting state serves as a crystalline nucleus, and an area in which the hole 21 in the surface of the amorphous silicon film is positioned at the center is used as a silicon film substantially in a single-crystal state. The silicon film substantially in the single-crystal state is used as a semiconductor film to form a thin film transistor.
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