Integrated circuit incorporating charge pump high voltage generator, includes an adiabatic reducer for re-injecting a fraction of charge pump voltage onto supply voltage

摘要

The high voltage generator (GHT) formed in the integrated circuit (CI) includes a charge pump (1). The input voltage of the pump is the supply voltage (VDD) for the integrated circuit whose rate is governed by direct and complemented clock signals (/=F). The circuit includes means (5), including an adiabatic reducer, to re-inject a fraction of the voltage (VIN) from the charge pump (VHV) to an input (6) where the supply voltage (VDD) is applied. The re-injection coefficient ( rho ) of the part (5) is in the range from 0 to 1 and is equal to 0.5. The adiabatic reducer (5) includes two capacitors and switches to alternatively connect in series the capacitors onto the voltage (VHV) issued from the charge pump and in parallel so as to produce the voltage fraction (VIN).