发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device for accurately aligning a mask, even with respect to an impurity region later. SOLUTION: The manufacturing method of semiconductor device includes a process for forming a first resist pattern RP1 which has a specified pattern containing an alignment mark pattern on a substrate 10, a process for introducing impurities to a substrate with the first resist pattern RP1 set as a mask, a process for forming a second resist pattern RP2 having a pattern for opening the alignment mark pattern on the first resist pattern RP1, a process for machining the substrate 10 to form an alignment mark AM with the first and second resist patterns RP1 and RP2 as a mask, and a process for removing the first and second resist patterns RP1 and RP2.
申请公布号 JP2003092242(A) 申请公布日期 2003.03.28
申请号 JP20010281187 申请日期 2001.09.17
申请人 SONY CORP 发明人 SUGIMOTO MASARU
分类号 G03F7/22;G03F9/00;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/22
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