| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device having a fuse, to reduce the chip size, to simplify the trimming process, and to shorten the period of assembly. SOLUTION: The fuse 11 made of a metal material is formed on a polysilicon film 5 connected to a resistor through a first interlayer insulating film 7. The resistor and the fuse 11 are arranged on different layers and therefore the chip size can be made small. Even if an opening part 25 is disposed for trimming on a second interlayer insulating film on the fuse 11, the interlayer insulating film 7 is formed below the fuse 11. Thus, the deterioration of reliability due to the influence of water can be prevented. When a second metal material layer for a second metal wiring layer 29 is made on the second interlayer insulating film of a material similar to the fuse 11, the second metal material layer is patterned and the second metal wiring layer 29 is formed, the fuse 11 is cut at the same time.
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