| 摘要 |
PROBLEM TO BE SOLVED: To suppress damage to an interlayer insulating film when photoresist is etched by using N2 /H2 . SOLUTION: A reformed layer which has resistance to N2 /H2 plasma, is formed at an exposed part of the interlayer insulating film by using N2 plasma (process 1). The photoresist is removed by using N2 /H2 plasma (process 2). |
