发明名称 |
HAZARDOUS PROCESS/PATTERN DETECTION SYSTEM AND METHOD, HAZARD DETECTION PROGRAM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To set semiconductor process conditions which avoid the generation of crystal defects and a mask pattern shape on a simulation basis. SOLUTION: The hazardous process/pattern detection system comprises an input data processing section 11 for converting input data to desired format data, a critical condition storage 6 for storing critical conditions regarding the generation of defects, a total simulation section 12 for carrying out overall simulation to the format data to output the result as format data for deciding hazardous processes, a mask simulation section 13 for carrying out mask simulation on the format data to output the result as format data or hazardous pattern deciding, a hazardous process deciding section 15 for comparing the format data for hazardous process deciding with the critical conditions for determining hazardous processes, and a hazardous pattern deciding section 16 for comparing the format data for hazardous pattern deciding with the critical conditions for deciding if a pattern is a hazardous pattern.
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申请公布号 |
JP2003092237(A) |
申请公布日期 |
2003.03.28 |
申请号 |
JP20020202893 |
申请日期 |
2002.07.11 |
申请人 |
TOSHIBA CORP |
发明人 |
FUJII OSAMU;AKIYAMA TATSUO |
分类号 |
H01L21/82;H01L21/00;H01L21/3065;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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