发明名称 HAZARDOUS PROCESS/PATTERN DETECTION SYSTEM AND METHOD, HAZARD DETECTION PROGRAM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To set semiconductor process conditions which avoid the generation of crystal defects and a mask pattern shape on a simulation basis. SOLUTION: The hazardous process/pattern detection system comprises an input data processing section 11 for converting input data to desired format data, a critical condition storage 6 for storing critical conditions regarding the generation of defects, a total simulation section 12 for carrying out overall simulation to the format data to output the result as format data for deciding hazardous processes, a mask simulation section 13 for carrying out mask simulation on the format data to output the result as format data or hazardous pattern deciding, a hazardous process deciding section 15 for comparing the format data for hazardous process deciding with the critical conditions for determining hazardous processes, and a hazardous pattern deciding section 16 for comparing the format data for hazardous pattern deciding with the critical conditions for deciding if a pattern is a hazardous pattern.
申请公布号 JP2003092237(A) 申请公布日期 2003.03.28
申请号 JP20020202893 申请日期 2002.07.11
申请人 TOSHIBA CORP 发明人 FUJII OSAMU;AKIYAMA TATSUO
分类号 H01L21/82;H01L21/00;H01L21/3065;(IPC1-7):H01L21/00 主分类号 H01L21/82
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