| 摘要 |
PROBLEM TO BE SOLVED: To provide a working apparatus by which a face to be worked is worked flatly and in a desired uniform residual film thickness even when initial film thickness irregularities exist on the face to be worked. SOLUTION: A CMP apparatus 1 is provided with a wafer chuck mechanism 20 on which a wafer W is mounted and held, a polishing pad 4 by which the face to be worked on the wafer W is polished and worked and a polishing head 2 used to hold the polishing pad 4. The polishing pad 4 held by the polishing head 2 is moved so as to be brought into contact with the face to be worked on the wafer W mounted and held on the mechanism 20, and the face to be worked is polished and worked. The apparatus 1 is constituted in such a way that the polishing pad 4 comprises a coarse polishing pad 4a by which the face to be worked can be worked partially and a medium polishing pad 4b and a finish polishing pad 4c by which the whole face of the face to be worked can be worked uniformly, that the film thickness irregularities on the face to be worked are worked so as to be planarized by the pad 4a and that the face to be worked is worked uniformly by the pads 4b, 4c. |
