| 摘要 |
PROBLEM TO BE SOLVED: To improve the emission efficiency of a nitride compound semiconductor light emitting element. SOLUTION: The nitride compound semiconductor light emitting element comprises a substrate, at least two semiconductor layers made of a different material from the substrate, and a light emitting region 3 containing at least In, and these form a laminate structure. An n-type GaN layer 2A is grown on the substrate and etched to form a plurality of steps 5 in its c-axis direction, and light emitting regions grown on the n-type GaN layer 2A such that each step is shaped with a constitution surface approximately parallel to the A-plane of the light emitting region, as seen from the C-plane of the semiconductor layer, and gallium nitride is grown in the a-axis direction to form a taper slope on the step. Irregularities are formed on the light emitting regions to increase the light emitting region per unit area, thereby raising the light emission efficiency. |
