发明名称 METHOD FOR MANUFACTURING Bi-Te-BASED THERMOELECTRIC MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a BiTe-based thermoelectric material having high crystal anisotropy and excellent thermoelectric properties. SOLUTION: This method comprises a step of manufacturing a sintered compact by applying hot pressing to Bi-Te alloy powder prepared by mechanical alloying and having fine crystal grains and a step of applying electric current treatment to the sintered compact in a temperature atmosphere of 600-800 K in such a way that the electric current value of the sintered compact per unit area becomes 0.1 mA/cm<2> to 10 A/cm<2> .
申请公布号 JP2003089804(A) 申请公布日期 2003.03.28
申请号 JP20010284054 申请日期 2001.09.18
申请人 MITSUBISHI HEAVY IND LTD 发明人 SHINDO KENTARO;HASEZAKI KAZUHIRO
分类号 B22F3/14;B22F1/00;B22F3/24;H01L35/16;H01L35/34;H02N11/00;(IPC1-7):B22F3/14 主分类号 B22F3/14
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