发明名称 |
METHOD FOR MANUFACTURING Bi-Te-BASED THERMOELECTRIC MATERIAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a BiTe-based thermoelectric material having high crystal anisotropy and excellent thermoelectric properties. SOLUTION: This method comprises a step of manufacturing a sintered compact by applying hot pressing to Bi-Te alloy powder prepared by mechanical alloying and having fine crystal grains and a step of applying electric current treatment to the sintered compact in a temperature atmosphere of 600-800 K in such a way that the electric current value of the sintered compact per unit area becomes 0.1 mA/cm<2> to 10 A/cm<2> .
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申请公布号 |
JP2003089804(A) |
申请公布日期 |
2003.03.28 |
申请号 |
JP20010284054 |
申请日期 |
2001.09.18 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
SHINDO KENTARO;HASEZAKI KAZUHIRO |
分类号 |
B22F3/14;B22F1/00;B22F3/24;H01L35/16;H01L35/34;H02N11/00;(IPC1-7):B22F3/14 |
主分类号 |
B22F3/14 |
代理机构 |
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主权项 |
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地址 |
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