| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate drying method in which the generation of stripelike particles on the surface of a substrate is suppressed or prevented and in which the substrate can be dried satisfactorily. SOLUTION: After droplets have been grown on a wafer (droplet growth process), the wafer is turned at a first droplet removal rate of about 100 rpm, and the wafer is turned further at a second droplet removal rate of about 200 rpm. Thereby, large droplets on the wafer are removed. The rotational speed of the wafer is accelerated to 1,000 to 1,800 rpm, and visible droplets are removed to the outside of the wafer (second rotation process). The rotational speed of the wafer is accelerated to 2,000 to 3,500 rpm, to shake off very small droplets, and the wafer is dried (third rotation process).
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