发明名称 |
METHOD FOR GROWING GARNET SINGLE CRYSTAL AND GARNET SINGLE CRYSTAL SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a large size neodymium-gallium garnet single crystal substrate having high quality sufficient for producing a Bi-substituted rare earth-iron garnet material for a Faraday rotator by a liquid phase epitaxial method and to provide a method for growing a neodymium-gallium garnet single crystal for the substrate. SOLUTION: When the neodymium-gallium garnet (Nd3 Ga5 O12 ) single crystal is grown by a crystal pulling method, the number (x) of the rotation of a seed crystal being rotated on the surface of a melt of a raw material is controlled to 3<=x<=20 (rpm) and the temperature gradient (y) in the upward direction from the surface of the melt of the raw material is controlled to -100<=y<=-50 ( deg.C/cm).
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申请公布号 |
JP2003089598(A) |
申请公布日期 |
2003.03.28 |
申请号 |
JP20010280842 |
申请日期 |
2001.09.14 |
申请人 |
TDK CORP |
发明人 |
OIDO ATSUSHI;SATO JUN;SHIMAKAWA KAZUYA |
分类号 |
C30B29/28;(IPC1-7):C30B29/28 |
主分类号 |
C30B29/28 |
代理机构 |
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地址 |
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