Surface emitting semiconductor laser diode fabrication includes deposition of protective etch resist layer protecting aluminum mirror stack

摘要

An upper layer (2) stable against atmospheric effects (i.e. air oxidation) is deposited. This comprises e.g. indium gallium phosphide (InGaP) on the top reflective layer of the Bragg mirror pack (3, 7). It is deposited as an etch resist layer and protects the high aluminum mirror layers (3) below. The absorbing layers (1, 9, 8) are either partially etched down forming e.g. a light exit opening or they are alternatively deposited in a structured manner. An Independent claim is included for the corresponding surface emitting laser diode.