Bias magnetic field compensation arrangement for magnetoresistive memory cell uses compensation layers magnetised for compensating bias magnetic field in memory layer

摘要

The bias magnetic field compensation arrangement is provided by at least one compensation layer (9,10), magnetised for compensating the bias magnetic field within a memory layer (1) of the magnetoresistive memory cell (6) incorporated in a semiconductor device (7). An Independent claim for a bias magnetic field compensation method for a memory layer of a magnetoresistive memory cell is also included.