METHOD FOR CUTTING SAPPHIRE SUBSTRATE FOR SEMICONDUCTOR DEVICE

摘要

A method for cutting a sapphire substrate having face A as the major face after forming a semiconductor device or in order to form a semiconductor device, characterized in that assuming the accurate face A is 11-20 and the direction of decreasing the angle being made with the c-axis is positive with reference to the line of intersection r13 between the 10-12 face or the 01-12 face and the major face, cutting lines are set in the first direction P making an angle of 0-4ring with the intersection and the second direction Q orthogonal to the first direction.