发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING CLOCK GENERATOR FOR CONTROLLING MEMORY AND METHOD OF GENERATING CLOCK SIGNAL
摘要 A semiconductor memory device having a clock generator for controlling a memory and a method of generating a clock are provided. The semiconductor memory device includes a processor, a program memory unit, and a clock generator. The processor generates control signals for controlling a program memory unit in response to a system clock, receives an instruction from the program memory unit, and is reset in response to a reset signal. The program memory unit receives the control signals and generates the instruction in response to a clock signal. The clock generator receives the control signals and the instruction in response to the system clock and generates the clock signal for controlling the program memory unit and the reset signal for resetting the processor. In the semiconductor memory device having a clock generator for controlling a memory and the method of generating a clock, the speed for reading an instruction of a program memory unit is prevented from being inaccurate due to a change in conditions for a process and the inaccuracy of simulation. Also, the delay of a system clock for controlling the program memory unit is automatically controlled. Thus, the speed for reading the instruction of the program memory unit is optimized.
申请公布号 US2003058731(A1) 申请公布日期 2003.03.27
申请号 US20020194103 申请日期 2002.07.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK JAE-HYUN
分类号 G11C11/407;G11C7/10;G11C7/22;(IPC1-7):G11C8/00 主分类号 G11C11/407
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