发明名称 |
Seminconductor device and method of manufacturing the same |
摘要 |
There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of silicon oxide, and heating the structure in an atmosphere containing He and/or Ne.
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申请公布号 |
US2003057504(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20020241456 |
申请日期 |
2002.09.12 |
申请人 |
MURAOKA KOUICHI;KURIHARA KAZUAKI |
发明人 |
MURAOKA KOUICHI;KURIHARA KAZUAKI |
分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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