发明名称 |
Method for forming an interface free layer of silicon on a substrate of monocrystalline silicon |
摘要 |
A method for forming an interface free layer of silicon on a substrate of monocrystalline silicon is provided. According to the method, a substrate of monocrystalline silicon having a surface substantially free of oxide is provided. A silicon layer in-situ doped is deposited on the surface of the substrate in an oxygen-free environment and at a temperature below 700° C. so as to produce a monocrystalline portion of the silicon layer adjacent to the substrate and a polycrystalline portion of the silicon layer spaced apart from the substrate. The silicon layer is heated so as to grow the monocrystalline portion of the silicon layer through a part of the polycrystalline portion of the silicon layer. Also provided is a method for manufacturing a bipolar transistor.
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申请公布号 |
US2003060028(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20020242293 |
申请日期 |
2002.09.12 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
WARD PETER;LORENTI SIMONA;FERLA GIUSEPPE |
分类号 |
H01L21/20;(IPC1-7):H01L21/331;C30B1/00;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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主权项 |
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地址 |
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