| 摘要 |
In a method of fabricating a TFT array substrate, a gate wire is formed on an insulating substrate. The gate wire has gate lines, gate electrodes, and gate pads connected to the gate lines. A gate insulating layer and a semiconductor layer are formed in sequence. A data wire is formed, which includes data lines intersecting the gate lines, source electrodes connected to the data lines and placed close to the gate electrodes, drain electrodes opposite the source electrodes with respect to the gate electrodes, and data pads connected to the data lines. A protective layer is deposited, and is patterned to form contact holes exposing at least the drain electrodes. A silver or silver alloy conductive layer is deposited on the protective layer. The conductive layer is patterned using an etching solution with phosphoric acid, nitric acid, acetic acid, potassium peroxymonosulphate and ultra-pure water or an etching solution with nitric acid, acetic acid, phosphoric acid, ethylene glycol and ultra-pure water to thereby form a reflecting layer. The reflecting layer is connected to the drain electrodes through the contact holes.
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