发明名称 |
Method for forming a diffusion region |
摘要 |
For particularly simple and targeted formations of a diffusion region, an interfacial region of a semiconductor substrate is subjected to a thermal transformation process and thereby carry out the thermally activated diffusion of a dopant in a substantially directed form, in particular in substantially a preferential direction, by interaction of a provided dopant with a transforming interfacial region.
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申请公布号 |
US2003060029(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20020210735 |
申请日期 |
2002.07.31 |
申请人 |
BONART DIETRICH;VOIGT PETER |
发明人 |
BONART DIETRICH;VOIGT PETER |
分类号 |
H01L21/225;H01L21/8242;H01L27/108;(IPC1-7):H01L21/04;H01L21/38 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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