发明名称 Method for forming a diffusion region
摘要 For particularly simple and targeted formations of a diffusion region, an interfacial region of a semiconductor substrate is subjected to a thermal transformation process and thereby carry out the thermally activated diffusion of a dopant in a substantially directed form, in particular in substantially a preferential direction, by interaction of a provided dopant with a transforming interfacial region.
申请公布号 US2003060029(A1) 申请公布日期 2003.03.27
申请号 US20020210735 申请日期 2002.07.31
申请人 BONART DIETRICH;VOIGT PETER 发明人 BONART DIETRICH;VOIGT PETER
分类号 H01L21/225;H01L21/8242;H01L27/108;(IPC1-7):H01L21/04;H01L21/38 主分类号 H01L21/225
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