发明名称 |
Increased capacitance trench capacitor |
摘要 |
Disclosed is a method of increasing the capacitance of a trench capacitor by increasing sidewall area, comprising: forming a trench in a silicon substrate, the trench having a sidewall; forming islands on the sidewall of the trench; and etching pits into the sidewall using the islands as a mask. The capacitor is completed by forming a node insulator on said on the pits and the sidewall; and filling said trench with a trench conductor.
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申请公布号 |
US2003060005(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20010682607 |
申请日期 |
2001.09.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;MA WILLIAM H. |
分类号 |
H01L21/02;H01L21/8242;H01L29/94;(IPC1-7):H01L21/824;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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