METHOD FOR PRETREATING DIELECTRIC LAYERS TO ENHANCE THE ADHESION OF CVD METAL LAYERS THERETO
摘要
A method for chemical vapor deposition comprises providing a quantity of nitrogen at the interface between a transition metal-based material and an underlying dielectric-covered substrate. The nitrogen can be provided by heating the substrate in an atmosphere of a nitrogen-containing process gas or by exposing the surface of the dielectric-covered substrate to a plasma generated from a nitrogen-containing process gas. In certain embodiments, the nitrogen on the surface of the dielectric is bound with atoms of a transition metal to form a thin layer of a transition metal nitride. The method promotes the adhesion of the transition metal-based layer to the dielectric by nullifying the effect of halogen atoms that are also incorporated at the transition metal/dielectric interface.
申请公布号
WO0245147(A3)
申请公布日期
2003.03.27
申请号
WO2001US45014
申请日期
2001.10.31
申请人
TOKYO ELECTRON LIMITED;TOKYO ELECTRON ARIZONA, INC.
发明人
WESTHOFF, RICHARD, C.;CALIENDO, STEVEN, P.;HILLMAN, JOSEPH, T.