发明名称 |
LOW-CAPACITY VERTICAL DIODE |
摘要 |
The invention concerns a low-capacity vertical diode designed to be mounted by a front surface made in a semiconductor substrate (1), comprising a first zone projecting relative to the surface of the substrate including at least a semiconductor layer (3) doped with a type of conductivity opposite to that of the substrate, the upper surface of the semiconductor layer bearing a first solder bump (23). The diode comprises a second zone including on the substrate a thick strip conductor (16) bearing at least second solder bumps (24), said first and second solder bumps defining a plane parallel to the substrate plane.
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申请公布号 |
WO03026020(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
WO2002FR03080 |
申请日期 |
2002.09.10 |
申请人 |
STMICROELECTRONICS S.A.;COLLARD, EMMANUEL;POVEDA, PATRICK |
发明人 |
COLLARD, EMMANUEL;POVEDA, PATRICK |
分类号 |
H01L29/861;H01L29/868;(IPC1-7):H01L29/861 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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