The invention relates to a method for the deposition of silicon nitride, wherein the temperature in a furnace (1) is adjusted to values of less than 650 DEG C. The silicon nitride thus formed is permeable with respect to small molecules, especially hydrogen molecules, yet exhibits etching selectivity with respect to silicon dioxide.
申请公布号
WO03025248(A1)
申请公布日期
2003.03.27
申请号
WO2002DE03138
申请日期
2002.08.27
申请人
INFINEON TECHNOLOGIES AG;BERNHARDT, HENRY;MORGENSCHWEIS, ANJA;OTTENWAELDER, DIETMAR;STADTMUELLER, MICHAEL
发明人
BERNHARDT, HENRY;MORGENSCHWEIS, ANJA;OTTENWAELDER, DIETMAR;STADTMUELLER, MICHAEL
