发明名称 |
MAGNETIC MEMORY WITH SPIN-POLARIZED CURRENT WRITING, USING AMORPHOUS FERROMAGNETIC ALLOYS, WRITING METHOD FOR SAME |
摘要 |
The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization. |
申请公布号 |
WO03025942(A2) |
申请公布日期 |
2003.03.27 |
申请号 |
WO2002FR03210 |
申请日期 |
2002.09.19 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;NOZIERES, JEAN-PIERRE;RANNO, LAURENT;CONRAUX, YANN |
发明人 |
NOZIERES, JEAN-PIERRE;RANNO, LAURENT;CONRAUX, YANN |
分类号 |
G11C11/15;G11C11/16;H01F10/32;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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