| 发明名称 |
Dual-stack, ball-limiting metallurgy and method of making same |
| 摘要 |
The invention relates to a ball-limiting metallurgy (BLM) stack for an electrical device. The dual BLM stack resists tin migration toward the upper metallization of the device. |
| 申请公布号 |
US2003060041(A1) |
申请公布日期 |
2003.03.27 |
| 申请号 |
US20010961036 |
申请日期 |
2001.09.21 |
| 申请人 |
INTEL CORPORATION |
发明人 |
DATTA MADHAV;EMORY DAVE;JOSHI SUBHASH M.;MENEZES SUSANNE;SUH DOOWON |
| 分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/60 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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