| 发明名称 |
Magneto-resistive device including soft synthetic ferrimagnet reference layer |
| 摘要 |
A memory device includes a data layer having a magnetization that can be oriented in first and second directions; and a synthetic ferrimagnet reference layer. The data and reference layers have different coercivities.
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| 申请公布号 |
US2003057461(A1) |
申请公布日期 |
2003.03.27 |
| 申请号 |
US20010963933 |
申请日期 |
2001.09.25 |
| 申请人 |
TRAN LUNG;SHARMA MANISH;BHATTACHARYYA MANOJ |
发明人 |
TRAN LUNG;SHARMA MANISH;BHATTACHARYYA MANOJ |
| 分类号 |
G11C11/15;G11C11/16;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
G11C11/15 |
| 代理机构 |
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