发明名称 |
Plasma processing apparatus |
摘要 |
A plasma processing apparatus processing a surface of a substrate by spraying a process gas in a plasma state from a gas spray opening of a spray nozzle onto the substrate includes: an exhaust opening for exhausting residual gas generated at the time of processing the surface of the substrate, the exhaust opening being provided at a position close to the periphery of the gas spray opening; and an air jet opening generating airflow, the air jet opening being provided surrounding the exhaust opening so as to prevent the residual gas from flowing out.
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申请公布号 |
US2003057848(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20020192564 |
申请日期 |
2002.07.11 |
申请人 |
YUASA MITSUHIRO;HOMMA KOJI |
发明人 |
YUASA MITSUHIRO;HOMMA KOJI |
分类号 |
H05H1/46;B01J19/08;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01J7/24 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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