发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus processing a surface of a substrate by spraying a process gas in a plasma state from a gas spray opening of a spray nozzle onto the substrate includes: an exhaust opening for exhausting residual gas generated at the time of processing the surface of the substrate, the exhaust opening being provided at a position close to the periphery of the gas spray opening; and an air jet opening generating airflow, the air jet opening being provided surrounding the exhaust opening so as to prevent the residual gas from flowing out.
申请公布号 US2003057848(A1) 申请公布日期 2003.03.27
申请号 US20020192564 申请日期 2002.07.11
申请人 YUASA MITSUHIRO;HOMMA KOJI 发明人 YUASA MITSUHIRO;HOMMA KOJI
分类号 H05H1/46;B01J19/08;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01J7/24 主分类号 H05H1/46
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