发明名称 |
Exposure method for correcting line width variation in a photomask |
摘要 |
A method for correcting line width variation occurring during a development process in fabricating a photomask and a recording medium in which the exposure method is recorded is provided, wherein pattern line width variation occurring in a development process with respect to a desirable pattern is estimated, and a corrective exposure is performed using a dose or bias of an electron beam corresponding to the estimated pattern line width variation. Accordingly, pattern line width variation occurring during a development process can be reduced. |
申请公布号 |
US2003061595(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20020225417 |
申请日期 |
2002.08.22 |
申请人 |
KI WON-TAI;YANG SEUNG-HUNE;CHOI JI-HYEON |
发明人 |
KI WON-TAI;YANG SEUNG-HUNE;CHOI JI-HYEON |
分类号 |
G03F1/08;G03F1/36;G03F1/68;G03F7/20;G03F7/30;H01L21/027;(IPC1-7):G06F17/50 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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