| 摘要 |
<p>A magnetic memory device having a wiring current density the upper limit of which can be increased without greatly changing the materials and the structure so as to be adapted to higher integration of memory elements constituting the magnetic memory device and to microminiaturization of the wiring. Control is made so that the current for producing a magnetic field is made to flow bidirectionally through the wiring for producing a recording auxiliary magnetic field along the hard magnetization axis in the memory area of a magnetoresistance effect memory device. As a result, the direction in which the current flows is not fixed only to one, and therefore degradation and disconnection due to electromigration hardly occur, the reliability is enhanced, and high density is realized.</p> |
