| 摘要 |
A nonvolatile semiconductor memory device and a method for testing the same by which the faulty memory device causing the unexpected data rewrite can be surely excluded. The test is carried out to judge whether or not a memory element storing a binary information corresponding to presence or not of an electric charge injected into a floating gate 13a arranged on a semiconductor substrate so as to be electrically isolated therefrom, the semiconductor substrate including a source S and a drain D formed thereon, can exactly hold the electric charge injected to the floating gate in advance. In the test, an approximately equal voltage is applied to the source and drain as the voltage for drawing out the electric charge held in the floating gate.
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