发明名称 Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same
摘要 The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.
申请公布号 US2003059644(A1) 申请公布日期 2003.03.27
申请号 US20010961037 申请日期 2001.09.21
申请人 INTEL CORPORATION 发明人 DATTA MADHAV;EMORY DAVE;HUANG TZEUN-LUH;JOSHI SUBHASH M.;KING CHRISTINE A.;MA ZHIYONG;MARIEB THOMAS;MCKEAG MICHAEL;SUH DOOWON;YANG SIMON
分类号 C22C11/06;C22C13/00;H01L21/60;(IPC1-7):B32B15/04;C25D1/00;B32B15/00;C25D5/10;C25D5/28 主分类号 C22C11/06
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