发明名称 |
Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same |
摘要 |
The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.
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申请公布号 |
US2003059644(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20010961037 |
申请日期 |
2001.09.21 |
申请人 |
INTEL CORPORATION |
发明人 |
DATTA MADHAV;EMORY DAVE;HUANG TZEUN-LUH;JOSHI SUBHASH M.;KING CHRISTINE A.;MA ZHIYONG;MARIEB THOMAS;MCKEAG MICHAEL;SUH DOOWON;YANG SIMON |
分类号 |
C22C11/06;C22C13/00;H01L21/60;(IPC1-7):B32B15/04;C25D1/00;B32B15/00;C25D5/10;C25D5/28 |
主分类号 |
C22C11/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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