发明名称 |
Signal processing semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.
|
申请公布号 |
US2003060183(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20020289331 |
申请日期 |
2002.11.07 |
申请人 |
HITACHI, LTD. |
发明人 |
KASA NOBUHIRO;TASHIRO YOSHIYASU;HORI KAZUAKI |
分类号 |
H01L27/04;H01L21/762;H01L21/822;H01L27/06;H04B1/18;H04B1/38;(IPC1-7):H04B1/28;H04B1/26;H04B15/00 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|