发明名称 |
Process to create buried heavy metal at selected depth |
摘要 |
Semiconductor devices having recombination centers comprised of well-positioned heavy metals. At least one lattice defect region within the semiconductor device is first created using particle beam implantation. Use of particle beam implantation positions the lattice defect region(s) with high accuracy in the semiconductor device. A heavy metal implantation treatment of the device is applied. The lattice defects created by the particle beam implantation act as gettering sites for the heavy metal implantation. Thus, after the creation of lattice defects and heavy metal diffusion, the heavy metal atoms are concentrated in the well-positioned lattice defect region(s).
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申请公布号 |
US2003057522(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20020288696 |
申请日期 |
2002.11.04 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
FRANCIS RICHARD;NG CHIU |
分类号 |
H01L21/22;H01L21/263;H01L21/265;H01L21/329;H01L21/331;H01L29/167;H01L29/32;(IPC1-7):H01L27/082 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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