| 摘要 |
<p>A method for cutting a sapphire substrate having face A as the major face after forming a semiconductor device or in order to form a semiconductor device, characterized in that assuming the accurate face A is (11-20) and the direction of decreasing the angle being made with the c-axis is positive with reference to the line of intersection r13 between the (10-12) face or the (01-12) face and the major face, cutting lines are set in the first direction P making an angle of 0-4˚ with the intersection and the second direction Q orthogonal to the first direction.</p> |
