发明名称 |
ULTRATHIN HIGH-K GATE DIELECTRIC WITH FAVORABLE INTERFACE PROPERTIES FOR IMPROVED SEMICONDUCTOR DEVICE PERFORMANCE |
摘要 |
An ultrathin gate dielectric having a graded dielectric constant and a method for forming the same are provided. The gate dielectric is believed to allow enhanced performance of semiconductor devices including transistors and dual-gate memory cells. A thin nitrogen-containing oxide, preferably having a thickness of less than about 10 angstroms, is formed on a semiconductor substrate. A silicon nitride layer having a thickness of less than about 30 angstroms may be formed over the nitrogen-containing oxide. The oxide and nitride layers are annealed in ammonia and nitrous oxide ambients, and the nitride layer thickness is reduced using a flowing-gas etch process. The resulting two-layer gate dielectric is believed to provide increased capacitance as compared to a silicon dioxide dielectric while maintaining favorable interface properties with the underlying substrate. In an alternative embodiment, a different high dielectric constant material is substituted for the silicon nitride. Alternatively, both nitride and a different high dielectric constant material may be used so that a three-layer dielectric is formed.
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申请公布号 |
US2003057432(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US19980207972 |
申请日期 |
1998.12.09 |
申请人 |
GARDNER MARK I.;KWONG DIM-LEE;FULFORD H. JIM |
发明人 |
GARDNER MARK I.;KWONG DIM-LEE;FULFORD H. JIM |
分类号 |
H01L21/28;H01L21/314;H01L29/51;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
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