| 摘要 |
The present invention provides, in a TFT, a channel region facing a gate electrode through a gate insulating film, a source electrode connected to the channel region and a drain region connected to the channel region on the side opposite the source region that are formed in a polycrystal semiconductor film that was patterned in island forms. In the channel region, a recombination center is formed for capturing a small number of carriers (holes) by impurities, such as inert-gas, metals, Group III elements, Group IV elements and Group V elements, introduced to a predetermined region in this channel region, or by defects generated due to the introduction of these impurities. The present invention thus provides an arrangement restraining bipolar transistor type behavior to stabilize saturation current and to provide a TFT that can improve reliability.
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