发明名称 |
TRENCH GATE MOS SEMICONDUCTOR DEVICE |
摘要 |
A trench MOS-gated device (200) comprises a doped monocrystalline semiconductor substrate (201) that includes an upper layer (201a) and is of a first conductivity type. An extended trench (202) in the substrate in the upper layer comprises two segments (203,204) having differing widths relative to one another: a bottom segment (204) of lesser width filled with a dielectric material (209), and an upper (203) segment of greater width lined with a dielectric material (205,206) and substantially filled with a conductive material (207), the filled upper segment of the trench forming a gate region (208). An extended doped zone (215) of a second opposite conductivity type extends from an upper surface (212) into the upper layer (210a) of the substrate only on one side of the trench (202), and a doped well region (210) of the second conductivity type overlying a drain zone (211) of the first conductivity type is disposed in the upper layer (201a) on the opposite side of the trench. |
申请公布号 |
WO0237569(A3) |
申请公布日期 |
2003.03.27 |
申请号 |
WO2001US31840 |
申请日期 |
2001.10.11 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
KOCON, CHRISTOPHER, B.;GREBS, THOMAS, E.;CUMBO, JOSEPH, L.;RIDLEY, RODNEY, S. |
分类号 |
H01L29/749;H01L21/331;H01L21/336;H01L29/06;H01L29/10;H01L29/423;H01L29/739;H01L29/78 |
主分类号 |
H01L29/749 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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