| 摘要 |
PURPOSE: A method for forming an oxide layer is provided to be capable of minimizing the use of oxygen gas when carrying out an ion implantation and flatly forming the oxide layer by carrying out an annealing process using nitrogen alone. CONSTITUTION: An oxide layer(12) and a photoresist layer(13) are sequentially deposited on a semiconductor substrate(11). A photoresist pattern is formed by selectively etching the photoresist layer for defining a field region. An ion implantation is carried out on the field region by implanting oxygen and silicon ions into the surface of the semiconductor substrate. An isolation layer(14) is formed on the field region implanted with oxygen and silicon ions by carrying out an annealing process on the resultant structure under nitrogen gas atmosphere. Preferably, the implanting energy of oxygen and silicon ions is in the range of 100-150 KeV.
|
