SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

摘要

A method of producing a semiconductor device comprising the steps of forming a first−conduction−type collector layer (102) on a part of the surface of a semiconductor substrate, then forming a collector opening (110) in a first insulation layer (108) formed on the semiconductor substrate, forming by epitaxial growing a semiconductor layer (111) including a second−conduction−type layer constituting a base layer on the semiconductor substrate in this collector opening, then sequentially laminating on the semiconductor substrate an etching stopper layer (112) for dry etching and a masking layer (200) for wet etching by epitaxial growing, removing part of the masking layer by dry etching to expose part of the etching stopper layer, and wet etching the exposed portion of the etching stopper layer using the remaining masking layer as a mask to thereby form a base joining opening (114) in the etching stopper layer and the masking layer.